NETSOL adds MRAM to its SRAM portfolio

NETSOL, the Korean memory IC maker, announced the successful development of its own MRAM (Magneto-resistive Random Access Memory) technology.  

After more than one year of developing the manufacturing process together with Samsung foundry, Netsol has now decided to set up its own product line.

The process technology is based on 28nm CMOS on 12 inch wafers and due to the STT-MRAM (Spin-Transfer-Torque-MRAM) cells the whole process is perfectly scalable to higher densities with smaller CMOS structures. The 28 nm CMOS process technology is leading edge as MRAM competitors are basically still in 130 or 180nm CMOS thus giving Netsol’s MRAMS a significant advantage over price (-50%) and power dissipation (- 30% in write current consumption).

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The advantage of MRAM technology is that it is non-volatile, which means that the IC retains its stored data even after the power supply has been switched off. Electronic devices are ready for operation immediately after switching on and do not have to load the data required for operation from a fixed memory, such as a hard drive, into the main memory. In contrast to established non-volatile memory flash technologies, MRAMs can, like conventional DRAMs/SRAMs, be written to practically an infinite number of times.

Write and read access times are similar to DRAM/SRAM. MRAM are thus combining the advantages of various established memory technologies and thus have got the potential to become a so-called “universal memory”, which could replace DRAM, SRAM, EEPROM and flash by just using one MRAM IC.

Brief advantages of MRAM compared to traditional storage technologies:

  • Fast enough to work as a cache → replacing PSRAM and SRAM
  • Non-volatile, data is maintained without power → replacing nvSRAM, NOR Flash
  • No capacitor, no battery needed → replacing nvSRAM + Super Cap and SRAM + Battery
  • Much faster write speeds than NOR Flash
  • Can replace two/three memory ICs by one -> to be used as single IC for Flash and Cache

NETSOL MRAM product line up (plan as of Q1-2022):

The first product will have the following specifications:

  • Storage density 16Mb
  • Interface: PPI and SPI
  • non-volatile
  • VCC: 1.8V and 3.3V
  • Speed: 35ns for PPI and 108MHz for SPI
  • Package: Industry Standard as drop-in replacement for existing memory ICs

Products with higher storage densities will follow in 2023.

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