DACO SEMICONDUCTOR announces new SiC MOSFET modules

DACO SEMICONDUCTOR is pleased to announce their new SiC MOSFET modules for 1200 V up to 200 A.

The new products feature RDS(ON)θ < 15 mΩ @ VGS = 20 V in module packages of Half Bridge HB-9434 or SOT-227.

Compared to standard silicon MOSFET modules the special benefits of these SiC products are primarily higher efficient operation 
with reduced thermal requirements over the entire operational temperature range combined with higher switching speeds.